发明名称 Multi Integrated Switching Device Structures
摘要 A switching device structure having a top layer and a bottom layer, each layer comprising a body of magnetizable material, such as permalloy, disposed within a coil wherein an armature is suspended in a cavity between the top and bottom layers, the armature having ferromagnetic material disposed on a top and bottom surface thereof. Each body of magnetizable material may be pulsed by its respective coil to switch it from a magnetic state to a non-magnetic state and then subsequently pulsed by the coil to switch it from the non-magnetic state to a magnetic state.
申请公布号 US2012161909(A1) 申请公布日期 2012.06.28
申请号 US201113281310 申请日期 2011.10.25
申请人 WILSON KEVIN;TARZWELL ROBERT;MCGUIRE PATRICK 发明人 WILSON KEVIN;TARZWELL ROBERT;MCGUIRE PATRICK
分类号 H01H45/00 主分类号 H01H45/00
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