| 摘要 |
A method of manufacturing a device based on LEDs includes the growth of semiconducting nanowires on a first electrode produced on an insulating face, and encapsulation thereof in planarising material; the formation, on the planarising material, of a second electrode with contact take-up areas. LEDs are formed by releasing a band of the first electrode around each take-up area, including forming a mask defining the bands on the second electrode, chemically etching the planarising material, stopped so as to preserve planarising material, chemically etching the portion of nanowires thus released, and then chemically etching the remaining planarising material. A trench is formed along each of the bands as far as the insulating face and the LEDs are placed in series by connecting the take-up areas and bands of the first electrode.
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