发明名称 SUBSTRATE GRINDING METHOD AND SEMICONDUCTOR ELEMENT MANUFACTURED BY USING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a substrate grinding method by which a substrate is ground easily. <P>SOLUTION: The substrate grinding method includes the process of placing a substrate 100 on one main surface of an substrate holding part 800 of elastic tabular form containing cavities communicatively connecting the outer surface to the interior, and vacuum sucking the substrate 100 via the substrate holding part 800 to fix the same as one main surface of the substrate holding part 800 is deformed into a shape along a surface shape of the substrate 100 by deaerating the substrate holding part 800 from its another main surface. The substrate grinding method also includes the process of grinding a main surface 110 of the substrate 100 that is opposite to its another main surface 120 in contact with the substrate holding part 800 as the substrate 100 is fixed via the substrate holding part 800, and the process of canceling the vacuum suction following the grinding process. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012115911(A) 申请公布日期 2012.06.21
申请号 JP20100264796 申请日期 2010.11.29
申请人 SHARP CORP 发明人 YOSHII MOTOYASU;TSUBOI TOSHIKI
分类号 B24B41/06;B24B7/00;H01L21/304 主分类号 B24B41/06
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