| 摘要 |
The purpose of the present invention is to obtain a semiconductor device having an improved heat radiation property and an improved insulation property. A semiconductor device is provided with a semiconductor element (1a), a lead frame (4a) connected to the semiconductor element (1a), a metallic base plate (6) disposed above the lead frame (4a) with a first insulation layer (5) therebetween, and a second insulation layer (7) disposed on the reverse side from the surface on which the first insulation layer (5) is disposed of the metallic base plate (6). The first insulation layer (5) is an insulation layer having a higher heat radiation property than that of the second insulation layer (7), and the second insulation layer (7) is an insulation layer having an insulation property identical to that of the first insulation layer (5) or higher than that of the first insulation layer (5). |
