| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor laser element with a high mass productivity. <P>SOLUTION: A manufacturing method of a semiconductor laser element 100 comprises an element bar manufacturing step S3 and an evaluation step S7. The evaluation step S7 includes: a first measurement step S7-1 of measuring laser characteristics with respect to two or more element parts 2 of a first element bar 35A; a first estimation step S7-3 of estimating a phase dependency D35A of the laser characteristics of the first element bar 35A; a second measurement step S7-5 of measuring the laser characteristics with respect to the element part 2 of a part of a second element bar 35B; a second estimation step S7-7 of estimating a phase of a diffraction grating 13P with respect to the element part 2 of a part of the second element bar 35B; a third estimation step S7-9 of estimating the phase of the diffraction grating 13P with respect to other element parts 2 of the second element bar 35B; and a laser characteristic estimation step S7-11 of estimating the laser characteristics with respect to the other element parts 2 of the second element bar 35B. <P>COPYRIGHT: (C)2012,JPO&INPIT |
