发明名称 |
METHOD FOR MANUFACTURING SILICON THIN FILM TRANSFER INSULATING WAFER |
摘要 |
[PROBLEM] Provided is a method for producing an SOI wafer which the method can prevent occurrence of thermal strain, detachment, crack and the like attributed to a difference in thermal expansion coefficients between the insulating substrate and the SOI layer and also improve the uniformity of film thickness of the SOI layer. [MEANS FOR SOLVING THE PROBLEM] Provided is a method for producing an SOI wafer comprising steps of: performing a surface activation treatment on at least one of a surface of an insulator wafer and a hydrogen ion-implanted surface of a single crystal silicon wafer having a hydrogen ion-implanted layer; bonding the hydrogen ion-implanted surface to the surface of the insulator wafer to obtain bonded wafers; heating the bonded wafers at a first temperature; grinding and/or etching a surface of a single crystal silicon wafer side of the bonded wafers thus heated so as to thin the single crystal silicon wafer of the bonded wafers; heating the bonded wafers thus ground and/or etched at a second temperature which is higher the first temperature; and performing detachment at the hydrogen ion-implanted layer by applying a mechanical impact to the hydrogen ion-implanted layer of the bonded wafers thus heated at the second temperature. |
申请公布号 |
EP2343729(A4) |
申请公布日期 |
2012.06.20 |
申请号 |
EP20090823666 |
申请日期 |
2009.10.29 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
AKIYAMA SHOJI;KUBOTA YOSHIHIRO;ITO ATSUO;KAWAI MAKOTO;TANAKA KOUICHI;TOBISAKA YUJI;NOJIMA YOSHIHIRO |
分类号 |
H01L21/02;H01L21/762;H01L27/12 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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