| 摘要 |
<p>PURPOSE: A method for fabricating a semiconductor device with a buried gate is provided to obtain a process margin by minimizing the loss of a capping layer and an element isolation film. CONSTITUTION: A buried gate(16) is formed to fill a part of a trench(15). A capping layer(17) is formed to fill the rest of the trench on the buried gate. An ion is injected into the capping layer, an element isolation film(12), and a pad polysilicon film(14). The pad polysilicon film is removed. A pad oxide film(13) is removed by pre-cleaning.</p> |
