发明名称 |
Vertical channel thin-film transistor and method of manufacturing the same |
摘要 |
Provided is a thin-film transistor (TFT) substrate. The TFT substrate includes: an insulating substrate; a semiconductor pattern which is formed on the insulating substrate, the semiconductor pattern having a top surface and a bottom surface; a source electrode and a drain electrode which are disposed on the top and bottom surfaces of the semiconductor pattern, respectively; a gate electrode which is disposed alongside the semiconductor pattern with a gate insulating film interposed therebetween; a data line which is connected to the source electrode and extends in a first direction; a gate line which is connected to the gate electrode and extends in a second direction; and a pixel electrode which is connected to the drain electrode and is formed in a pixel region. |
申请公布号 |
US8203662(B2) |
申请公布日期 |
2012.06.19 |
申请号 |
US20090571345 |
申请日期 |
2009.09.30 |
申请人 |
KANG HOON;LEE YUN-SEOK;KIM JAE-SUNG;JUNG YANG-HO;CHO YOUNG-JE;MAENG CHEON-JAE;LEE WOO-GEUN;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KANG HOON;LEE YUN-SEOK;KIM JAE-SUNG;JUNG YANG-HO;CHO YOUNG-JE;MAENG CHEON-JAE;LEE WOO-GEUN |
分类号 |
G02F1/136;H01L27/14;H01L29/04;H01L29/10;H01L29/15;H01L31/00;H01L31/036 |
主分类号 |
G02F1/136 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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