SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SAME, SOLID-STATE IMAGING DEVICE, METHOD FOR MANUFACTURING SAME, AND ELECTRONIC INFORMATION DEVICE

摘要

A SiON film is used as an oxidation preventing film for a wiring layer; therefore, increases in resistance because of oxidation of the wiring layer are suppressed, and complication of production processes is avoided by making the etching conditions for this oxidation prevention film and an inter-layer insulation film substantially the same. In semiconductor devices such as solid-state imaging devices where an integrated circuit is formed by forming on a silicon substrate, a conductive layer (104a) formed from polysilicon, a metal, or the like is formed via a lower side oxidation preventing film (103a) formed from a SiON film on a first interlayer insulating film (101), which is formed on a silicon substrate (101). An upper side oxidation preventing film (105) formed from a SiON film is formed on the entire surface so as to cover the upper surface and side surfaces of this conductive layer (104a).