METHODS AND STRUCTURES FOR INCREASED THERMAL DISSIPATION OF THIN FILM RESISTORS

摘要

A method of forming a semiconductor structure includes forming at least one trench in an insulator layer formed on a substrate. A distance between a bottom edge of the at least one trench and a top surface of a substrate is shorter than a distance between an uppermost surface of the insulator layer and the top surface of the substrate. The method also includes: forming a resistor on the insulator layer and extending into the at least one trench; forming a first contact in contact with the resistor; and forming a second contact in contact with the resistor such that current is configured to flow from the first contact to the second contact through a central portion of the resistor.