发明名称 |
Techniques for sensing a semiconductor memory device |
摘要 |
Techniques for sensing a semiconductor memory device are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus including a memory cell array comprising a plurality of memory cells. The apparatus may also include a first data sense amplifier circuitry including an amplifier transistor having a first region coupled to at least one of the plurality of memory cells via a bit line. The apparatus may further include a data sense amplifier latch circuitry including a first input node coupled to the data sense amplifier circuitry via a second region of the amplifier transistor. |
申请公布号 |
US8199595(B2) |
申请公布日期 |
2012.06.12 |
申请号 |
US20100877044 |
申请日期 |
2010.09.07 |
申请人 |
BAUSER PHILIPPE BRUNO;DAGA JEAN-MICHEL;MICRON TECHNOLOGY, INC. |
发明人 |
BAUSER PHILIPPE BRUNO;DAGA JEAN-MICHEL |
分类号 |
G11C7/02 |
主分类号 |
G11C7/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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