| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent a film of a tungsten layer from remaining. <P>SOLUTION: A manufacturing method of a semiconductor element comprises: a step of dry etching a tungsten (W) layer 5 at a high speed for a wafer having a semiconductor substrate 1, an insulating film 2 provided with a contact hole 3, a coating layer 4 which coats a surface of the insulating film 2 and a surface of the contact hole 3, and the W layer 5 embedded into the contact hole 3, without cooling the wafer in the range in which the coating layer 4 is not exposed; a step of dry etching the W layer 5 at a low speed without cooling the wafer in the range in which the coating layer 4 is not exposed; a step of dry etching the W layer 5 at the low speed till the coating layer 4 is exposed while cooling the wafer; and a step of dry etching the W layer 5 in the contact hole 3 at the low speed to the height of the insulating film 2 while cooling the wafer. <P>COPYRIGHT: (C)2012,JPO&INPIT |
