| 摘要 |
The present invention relates to a hot zone device for use in a crystal-growing furnace. The hot zone device has a gas inlet. The gas inlet is mounted in an insulation layer at a position above the crucible in a manner protruding into an interior of the crucible. The insulation layer is formed with a gas exit. The gas inlet is positioned such that the opening thereof is spaced apart from the free surface of the melt contained in the crucible by a distance substantially equal to or shorter than 10 cm, so as to allow the free surface of the melt to be blown by the guided gas flow in such a manner that the gas flow takes the impurity away from the free surface efficiently. As a result, the crystal ingot obtained by solidifying the melt will exhibit a reduced concentration of impurities and an improved crystal quality. |
