| 发明名称 |
Method to improve electrical leakage performance and to minimize electromigration in semiconductor devices |
| 摘要 |
Embodiments of methods for improving electrical leakage performance and minimizing electromigration in semiconductor devices are generally described herein. Other embodiments may be described and claimed. |
| 申请公布号 |
US8192805(B2) |
申请公布日期 |
2012.06.05 |
| 申请号 |
US20080338582 |
申请日期 |
2008.12.18 |
| 申请人 |
RUSSELL NOEL;SHERMAN STEVEN;HAUTALA JOHN J.;TEL EPION INC. |
发明人 |
RUSSELL NOEL;SHERMAN STEVEN;HAUTALA JOHN J. |
| 分类号 |
C23C14/48;B05D3/06;B05D5/12;C23C14/02;C23C14/58;H01L21/3115;H01L21/3215 |
主分类号 |
C23C14/48 |
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