| 发明名称 |
Phase change memory state determination using threshold edge detection |
| 摘要 |
Subject matter disclosed herein relates to techniques to read a memory cell that involve a threshold edge phenomenon of a reset state of phase change memory. |
| 申请公布号 |
US8194441(B2) |
申请公布日期 |
2012.06.05 |
| 申请号 |
US20100889372 |
申请日期 |
2010.09.23 |
| 申请人 |
THIRUVENGADAM ASWIN;MICRON TECHNOLOGY, INC. |
发明人 |
THIRUVENGADAM ASWIN |
| 分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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