发明名称 METHOD OF MANUFACTURING A BIPOLAR TRANSISTOR AND BIPOLAR TRANSISTOR
摘要 Consistent with an example embodiment, there is method of manufacturing a bipolar transistor comprising providing a substrate including an active region; depositing a layer stack; forming a base window over the active region in said layer stack; forming at least one pillar in the base window, wherein a part of the pillar is resistant to polishing; depositing an emitter material over the resultant structure, thereby filling said base window; and planarizing the deposited emitter material by polishing. Consistent with another example embodiment, a bipolar transistor may be manufactured according to the afore-mentioned method.
申请公布号 US2012132999(A1) 申请公布日期 2012.05.31
申请号 US201113303099 申请日期 2011.11.22
申请人 GRIDELET EVELYNE;VANHOUCKE TONY;DONKERS JOHANNES JOSEPHUS THEODORUS MARINUS;MERTENS HANS;DURIEZ BLANDINE;NXP B.V. 发明人 GRIDELET EVELYNE;VANHOUCKE TONY;DONKERS JOHANNES JOSEPHUS THEODORUS MARINUS;MERTENS HANS;DURIEZ BLANDINE
分类号 H01L27/06;H01L21/331;H01L29/732 主分类号 H01L27/06
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