发明名称 |
METHOD OF MANUFACTURING A BIPOLAR TRANSISTOR AND BIPOLAR TRANSISTOR |
摘要 |
Consistent with an example embodiment, there is method of manufacturing a bipolar transistor comprising providing a substrate including an active region; depositing a layer stack; forming a base window over the active region in said layer stack; forming at least one pillar in the base window, wherein a part of the pillar is resistant to polishing; depositing an emitter material over the resultant structure, thereby filling said base window; and planarizing the deposited emitter material by polishing. Consistent with another example embodiment, a bipolar transistor may be manufactured according to the afore-mentioned method. |
申请公布号 |
US2012132999(A1) |
申请公布日期 |
2012.05.31 |
申请号 |
US201113303099 |
申请日期 |
2011.11.22 |
申请人 |
GRIDELET EVELYNE;VANHOUCKE TONY;DONKERS JOHANNES JOSEPHUS THEODORUS MARINUS;MERTENS HANS;DURIEZ BLANDINE;NXP B.V. |
发明人 |
GRIDELET EVELYNE;VANHOUCKE TONY;DONKERS JOHANNES JOSEPHUS THEODORUS MARINUS;MERTENS HANS;DURIEZ BLANDINE |
分类号 |
H01L27/06;H01L21/331;H01L29/732 |
主分类号 |
H01L27/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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