发明名称 |
III-V Compound Semiconductor Material Passivation With Crystalline Interlayer |
摘要 |
The present disclosure reduces and, in some instances, eliminates the density of interface states in III-V compound semiconductor materials by providing a thin crystalline interlayer onto an upper surface of a single crystal III-V compound semiconductor material layer to protect the crystallinity of the single crystal III-V compound semiconductor material layer's surface atoms prior to further processing of the structure.
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申请公布号 |
US2012132913(A1) |
申请公布日期 |
2012.05.31 |
申请号 |
US20100955203 |
申请日期 |
2010.11.29 |
申请人 |
SHIU KUEN-TING;GUO DECHAO;HAN SHU-JEN;KIEWRA EDWARD W.;KOBAYASHI MASAHARU;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
SHIU KUEN-TING;GUO DECHAO;HAN SHU-JEN;KIEWRA EDWARD W.;KOBAYASHI MASAHARU |
分类号 |
H01L29/78;H01L21/20 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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