| 摘要 |
<p>PURPOSE: A method for forming a fine pattern of a semiconductor device is provided to reduce manufacturing costs by executing a spacer cutting process of a cell region and a patterning process of a peripheral region at the same time. CONSTITUTION: A partition is formed on a poly-silicon layer. A spacer(390) is formed on the sidewall of the partition. A first poly silicon film pattern is formed by cutting the spacer while etching the poly-silicon layer of a cell region and the poly-silicon layer of a peripheral region. A second poly silicon film pattern(340A) is formed by etching the first poly silicon film pattern of the cell region. An oxide film pattern is formed by etching an oxide film. A substrate is patterned by using the first poly silicon film pattern, the second poly silicon film pattern, and the oxide film pattern as a mask.</p> |
