| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a silicon carbide semiconductor device, capable of reducing maintenance frequency of thermal treatment equipment and obtaining low resistance of an ohmic contact while preventing the roughness of an electrode surface. <P>SOLUTION: An Al-Ti alloy 11 is accumulated on a P-type SiC layer 10 as an electrode material, a protection film 12 of TiN is formed on the alloy. After that, heat treatment is performed at temperature exceeding a fusion point of Al, the Al-Ti alloy 11 reacts with the P-type SiC layer 10 to be alloyed, and an ohmic contact of an electrode and the P-type SiC layer 10 is obtained. The evaporation and dispersion of Al from the Al-Ti alloy 11 is prevented by the protection film 12 in the heat treatment. <P>COPYRIGHT: (C)2012,JPO&INPIT |
