| 摘要 |
The present invention provides an electronic device with improved characteristics and a method of making the electronic device. In a method of making an electronic device (piezoelectric device) 74 according to the present invention, an outer edge R1 of a piezoelectric film 52A formed on an electrode film 46A of a laminate 60 is located inside an outer edge R2 of the electrode film 46A. For this reason, in removal of a monocrystalline Si substrate 14 from a multilayer board 61, where an etching solution permeates between polyimide 72 and laminate 60, the etching solution circumvents the electrode film 46A before it reaches the piezoelectric film 52A. Namely, a route A of the etching solution to the piezoelectric film 52A is significantly extended by the electrode film 46A. In the method of making the electronic device 74, therefore, the etching solution is less likely to reach the piezoelectric film 52A. It significantly suppresses a situation of dissolution of the piezoelectric film 52A and realizes improvement in characteristics of the piezoelectric device 74 made.
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