发明名称 SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE
摘要 PURPOSE: A substrate processing apparatus, a manufacturing method of a semiconductor device, and the semiconductor device are provided to prevent degradation of substrate process quality by preventing depositions of reaction products or decomposition materials on the inner wall of a nozzle. CONSTITUTION: A process chamber(201) stores a plurality of substrates(200). A heating unit(207) heats inside the process chamber. A source gas nozzle(233a) supplies a first process gas to the inside the process chamber from a source gas supply unit. A controller controls the heating unit, the source gas supply unit, and an exhaust unit. A treatment furnace(202) comprises a process tube(205) and a manifold(209).
申请公布号 KR20120050896(A) 申请公布日期 2012.05.21
申请号 KR20110106837 申请日期 2011.10.19
申请人 HITACHI KOKUSAI ELECTRIC INC. 发明人 SASAKI SHINYA;TAKEBAYASHI YUJI;KOGURA SHINTARO
分类号 H01L21/31;C23C16/455 主分类号 H01L21/31
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