发明名称 |
SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE |
摘要 |
PURPOSE: A substrate processing apparatus, a manufacturing method of a semiconductor device, and the semiconductor device are provided to prevent degradation of substrate process quality by preventing depositions of reaction products or decomposition materials on the inner wall of a nozzle. CONSTITUTION: A process chamber(201) stores a plurality of substrates(200). A heating unit(207) heats inside the process chamber. A source gas nozzle(233a) supplies a first process gas to the inside the process chamber from a source gas supply unit. A controller controls the heating unit, the source gas supply unit, and an exhaust unit. A treatment furnace(202) comprises a process tube(205) and a manifold(209). |
申请公布号 |
KR20120050896(A) |
申请公布日期 |
2012.05.21 |
申请号 |
KR20110106837 |
申请日期 |
2011.10.19 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC. |
发明人 |
SASAKI SHINYA;TAKEBAYASHI YUJI;KOGURA SHINTARO |
分类号 |
H01L21/31;C23C16/455 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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