METAL-DOPED OXIDE SEMICONDUCTOR THIN FILM TRANSISTOR

摘要

PURPOSE: A metal doped oxide semiconductor thin film transistor is provided to easily control device properties according to a process condition by suppressing carrier generation due to oxygen deficiency. CONSTITUTION: A gate electrode(12) is formed on a substrate(10). A gate insulating film(14) is formed on the upper part of the substrate. An oxide semiconductor layer(16) is formed on the gate insulating film. The oxide semiconductor layer provides a channel region, a source region, and a drain region. Source and drain electrodes(18a,18b) are respectively formed on the oxide semiconductor layer.