| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device and a method of manufacturing the same, capable of reducing an installation area of a vertical transistor without deterioration in characteristics of the vertical transistor, and being suitable for high integration. <P>SOLUTION: A semiconductor device has a plurality of pillars 30 arranged at a constant interval. The pillars 30 include a channel pillar 1 consisting of a semiconductor layer that functions as a channel of a vertical transistor T; and a lifting contact plug 2 consisting of an impurity diffusion layer, and being electrically connected with a lower diffusion layer 4 that is connected with a lower part of the channel pillar 1 and functions as one source-drain of the vertical transistor T. <P>COPYRIGHT: (C)2012,JPO&INPIT |
