发明名称 VARIABLE-WIDTH POWER GATING MODULE
摘要 A semiconductor device includes a primary voltage rail, a secondary voltage rail, a plurality of transistors coupled between the primary and secondary voltage rails, and control logic operable to enable a first subset of the plurality of transistors to couple the primary voltage rail to the secondary voltage rail. During a steady state condition, the first subset comprises less than all of the plurality of transistors.
申请公布号 US2012119816(A1) 申请公布日期 2012.05.17
申请号 US20100948596 申请日期 2010.11.17
申请人 ROGERS AARON S.;BAILEY DANIEL W.;QUINNELL ERIC 发明人 ROGERS AARON S.;BAILEY DANIEL W.;QUINNELL ERIC
分类号 H03K17/687 主分类号 H03K17/687
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