发明名称 |
SHIELDED SEMICONDUCTOR DEVICE STRUCTURE |
摘要 |
In one embodiment, a semiconductor device is formed to include a plurality of conductor layers that interconnect electrical signals between semiconductor elements of the semiconductor device. A metal shield layer is formed overlying a portion of the plurality of conductor layers. A signal re-distribution layer is formed overlying the metal shield layer. |
申请公布号 |
US2012119340(A1) |
申请公布日期 |
2012.05.17 |
申请号 |
US201213357187 |
申请日期 |
2012.01.24 |
申请人 |
DALAL HORMAZDYAR M.;PRASAD JAGDISH |
发明人 |
DALAL HORMAZDYAR M.;PRASAD JAGDISH |
分类号 |
H01L23/58 |
主分类号 |
H01L23/58 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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