发明名称 SHIELDED SEMICONDUCTOR DEVICE STRUCTURE
摘要 In one embodiment, a semiconductor device is formed to include a plurality of conductor layers that interconnect electrical signals between semiconductor elements of the semiconductor device. A metal shield layer is formed overlying a portion of the plurality of conductor layers. A signal re-distribution layer is formed overlying the metal shield layer.
申请公布号 US2012119340(A1) 申请公布日期 2012.05.17
申请号 US201213357187 申请日期 2012.01.24
申请人 DALAL HORMAZDYAR M.;PRASAD JAGDISH 发明人 DALAL HORMAZDYAR M.;PRASAD JAGDISH
分类号 H01L23/58 主分类号 H01L23/58
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