SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME, AND DESIGN PROGRAM OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To handle the desired number of transistors in a semiconductor device.

SOLUTION: A semiconductor device comprises: a first to fourth diffusion layers of a first conductive type formed in a semiconductor substrate; fifth to eighth diffusion layers of a second conductive type formed in the semiconductor substrate; first electrodes formed above between the first and second diffusion layers and between the fifth and sixth diffusion layers; second electrodes formed above between the third and fourth diffusion layers and between the seventh and eighth diffusion layers; and an insulating film and a third electrode formed above between the sixth and seventh diffusion layers. The third electrode is connected to a first potential.

COPYRIGHT: (C)2012,JPO&INPIT