发明名称 |
NONVOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
Provided is a nonvolatile memory device which requires a lower initializing voltage such that the nonvolatile memory device can be operated at a low voltage. The nonvolatile memory device (10) includes: a first electrode layer (105) formed above a semiconductor substrate (100); a first oxygen-deficient tantalum oxide layer (106x) formed on the first electrode layer (105) and having a composition represented by TaOx where 0.8≦̸x≦̸1.9; a second oxygen-deficient tantalum oxide layer (106y) formed on the first oxygen-deficient tantalum oxide layer (106x) and having a composition represented by TaOy where 2.1≦̸y; and a second electrode layer (107) formed on the second tantalum oxide layer (106y). The second tantalum oxide layer (106y) has a pillar structure including a plurality of pillars. |
申请公布号 |
US2012112153(A1) |
申请公布日期 |
2012.05.10 |
申请号 |
US201113380159 |
申请日期 |
2011.07.13 |
申请人 |
NINOMIYA TAKEKI;FUJII SATORU;HAYAKAWA YUKIO;MIKAWA TAKUMI |
发明人 |
NINOMIYA TAKEKI;FUJII SATORU;HAYAKAWA YUKIO;MIKAWA TAKUMI |
分类号 |
H01L45/00 |
主分类号 |
H01L45/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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