| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light-emitting device capable of operating on a high drive voltage. <P>SOLUTION: A light-emitting device comprises a substrate, and two GaN-based light-emitting elements that are adjacently disposed on the substrate, have a first and second light-emitting portions on their top surfaces each including an electrode to which a voltage of the same polarity is applied, and are integrally formed with the substrate. Each of the two light-emitting portions of the two GaN-based light-emitting elements shares one electrode, and the shared electrode is disposed on a semiconductor layer in common with the two light-emitting portions. The shared electrode of one of the GaN-based light-emitting elements is connected to the electrode of the first light-emitting portion of the other of the GaN-based light-emitting elements. The shared electrode of the other of the GaN-based light-emitting elements is connected to the electrode of the second light-emitting portion of one of the GaN-based light-emitting elements. <P>COPYRIGHT: (C)2012,JPO&INPIT |
