发明名称 METAL CAPACITOR AND METHOD OF MAKING THE SAME
摘要 A method of making a metal capacitor includes the following steps. A dielectric layer having a dual damascene metal interconnection and a damascene capacitor electrode is provided. Then, a treatment is performed to increase the dielectric constant of the dielectric layer surrounding the damascene capacitor electrode. The treatment can be UV radiation, a plasma treatment or an ion implantation. Accordingly, the metal capacitor will have a higher capacitance and RC delay between the dual damascene metal interconnection and the dielectric layer can be prevented.
申请公布号 US2012115301(A1) 申请公布日期 2012.05.10
申请号 US201213342109 申请日期 2012.01.01
申请人 YANG CHIN-SHENG 发明人 YANG CHIN-SHENG
分类号 H01L21/02 主分类号 H01L21/02
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