| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an associative storage device capable of performing high-speed retrieval without generating a soft error and a standby current. <P>SOLUTION: An associative memory cell includes a tunnel magnetoresistive element TMR, one end of which is connected to a search line SL, a capacitative element C5 connected to the other end of the tunnel magnetoresistive element TMR, a first MOS transistor N4 which is provided between the other end of the tunnel magnetoresistive element TMR and a ground power source and whose control electrode is connected to a word line RWL, and a second MOS transistor N2 which is provided between a match line ML and the ground power source and whose control electrode is adapted to receive a voltage generated at the other end of the tunnel magnetoresistive element TMR. <P>COPYRIGHT: (C)2012,JPO&INPIT |
