| 发明名称 |
METHOD FOR FORMING ALUMINUM NITRIDE FILM |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for forming an aluminum nitride film having a high resistance to thermal shock and a high density by a CVD method. <P>SOLUTION: The method for forming an aluminum nitride film comprises: mixing a gas containing aluminum atoms (Al) and a gas containing nitrogen atoms (N) with a gas containing oxygen atoms (O); and feeding the mixture to a member to be covered by an aluminum nitride film. <P>COPYRIGHT: (C)2012,JPO&INPIT |
| 申请公布号 |
JP2012087392(A) |
申请公布日期 |
2012.05.10 |
| 申请号 |
JP20100237138 |
申请日期 |
2010.10.22 |
| 申请人 |
SHIN-ETSU CHEMICAL CO LTD |
发明人 |
KATO KOJI;KANO MASAKI;YAMAMURA KAZUICHI |
| 分类号 |
C23C16/34;C01B21/072;H01L21/31 |
主分类号 |
C23C16/34 |
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