| 摘要 |
A method of forming a feature in a low-k (k<3.0) dielectric layer is provided. A low-k dielectric layer is placed over a substrate. A patterned photoresist mask is placed over the low-k dielectric layer. At least one feature is etched into the low-k dielectric layer. A stripping gas comprising CO<SUB>2 </SUB>is provided. A plasma is formed from the stripping gas comprising CO<SUB>2</SUB>. The plasma from the stripping gas comprising CO<SUB>2 </SUB>is used to strip the patterned photoresist mask.
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