| 摘要 |
A NAND flash memory comprising blocks which are units of writing and deletion of data, the block comprising: memory cells from which data corresponding to values of held threshold voltages can be read by applying a reading voltage to control gates of the memory cells; source-side selection gate transistors connected between a common source line and the memory cells; drain-side selection gate transistors connected between a bit line and the memory cells; and monitor cells which are configured as the memory cells and have a threshold voltage set according to monitor data, and from which data corresponding to values of held threshold voltages can be read by applying a decision voltage to control gates of the monitor cells.
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