发明名称 |
Plasma Etch Resistant, Highly Oriented Yttria Films, Coated Substrates and Related Methods |
摘要 |
Included within the scope of the invention are plasma etch-resistant films for substrates. The films include a yttria material and a at least a portion of the yttria material is in a crystal phase having an orientation defined by a Miller Index notation {111}. Also included are methods of manufacturing plasma etch-resistant films on a substrate. Such methods include applying a yttria material-containing composition onto at least a portion of a surface of a substrate to form a film. The film includes a yttria material and at least a portion of the yttria material is in a crystal phase having an orientation defined by a Miller Index notation {111}.
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申请公布号 |
US2012103519(A1) |
申请公布日期 |
2012.05.03 |
申请号 |
US201113280129 |
申请日期 |
2011.10.24 |
申请人 |
AHEEM MOHAMMED;LEE SANG-HO;MERCER THOMAS;VORSA VASIL;GREENE, TWEED OF DELAWARE, INC. |
发明人 |
AHEEM MOHAMMED;LEE SANG-HO;MERCER THOMAS;VORSA VASIL |
分类号 |
H01L21/00;B05D5/00;B44C1/22;C23C4/12;C23C14/34;C23C16/48 |
主分类号 |
H01L21/00 |
代理机构 |
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地址 |
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