发明名称 A method of fabricating a composite structure with a stable bonding layer of oxide
摘要 <p>A method of fabricating a composite structure that has at least one thin film bonded to a support substrate and a bonding layer of oxide formed by deposition between the support substrate and the thin film. The thin film and the support substrate have a mean thermal expansion coefficient of 7×10−6 K−1 or more. The bonding layer of oxide is formed by low pressure chemical vapor deposition (LPCVD) of a layer of oxide on the bonding face of the support substrate or on the bonding face of the thin film. The thin film has a thickness of 5 micrometers or less while the thickness of the layer of oxide is equal to or greater than the thickness of the thin film.</p>
申请公布号 EP2232545(B1) 申请公布日期 2012.05.02
申请号 EP20080871508 申请日期 2008.12.29
申请人 S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES 发明人 FAURE, BRUCE;MARCOVECCHIO, ALEXANDRA
分类号 H01L21/762 主分类号 H01L21/762
代理机构 代理人
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