发明名称 |
A method of fabricating a composite structure with a stable bonding layer of oxide |
摘要 |
<p>A method of fabricating a composite structure that has at least one thin film bonded to a support substrate and a bonding layer of oxide formed by deposition between the support substrate and the thin film. The thin film and the support substrate have a mean thermal expansion coefficient of 7×10−6 K−1 or more. The bonding layer of oxide is formed by low pressure chemical vapor deposition (LPCVD) of a layer of oxide on the bonding face of the support substrate or on the bonding face of the thin film. The thin film has a thickness of 5 micrometers or less while the thickness of the layer of oxide is equal to or greater than the thickness of the thin film.</p> |
申请公布号 |
EP2232545(B1) |
申请公布日期 |
2012.05.02 |
申请号 |
EP20080871508 |
申请日期 |
2008.12.29 |
申请人 |
S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES |
发明人 |
FAURE, BRUCE;MARCOVECCHIO, ALEXANDRA |
分类号 |
H01L21/762 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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