Nonvolatile resistance random access memory device and method for fabricating the same

摘要

PURPOSE: A nonvolatile resistance random access memory device and a fabricating method thereof are provided to obtain switch reproducibility and uniformity as the same conductive filament can be formed or erased in a repetitive operation between non-resistance state and the high resistance state. CONSTITUTION: A conductive nano particle is positioned on a first electrode(12). A resistance variation material layer(16) is positioned on the conductive nano particle. A second electrode(18) is located on the resistance variation material layer. The removal of protein is implemented by using the UV curing or the ozone treatment.