发明名称 Relaxation and transfer of strained material layers
摘要 <p>The present invention relates a method for the formation of an at least partially relaxed strained material layer, the method comprising the steps of providing a seed substrate; patterning the seed substrate; growing a strained material layer on the patterned seed substrate; transferring the strained material layer from the patterned seed substrate to an intermediate substrate; and at least partially relaxing the strained material layer by a heat treatment.</p>
申请公布号 EP2221853(B1) 申请公布日期 2012.04.25
申请号 EP20090290100 申请日期 2009.02.19
申请人 S.O.I. TEC SILICON 发明人 FAURE, BRUCE;LETERTRE, FABRICE;GUENARD, PASCAL
分类号 H01L21/20;C30B29/38;H01L21/762 主分类号 H01L21/20
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