发明名称 |
Relaxation and transfer of strained material layers |
摘要 |
<p>The present invention relates a method for the formation of an at least partially relaxed strained material layer, the method comprising the steps of providing a seed substrate; patterning the seed substrate; growing a strained material layer on the patterned seed substrate; transferring the strained material layer from the patterned seed substrate to an intermediate substrate; and at least partially relaxing the strained material layer by a heat treatment.</p> |
申请公布号 |
EP2221853(B1) |
申请公布日期 |
2012.04.25 |
申请号 |
EP20090290100 |
申请日期 |
2009.02.19 |
申请人 |
S.O.I. TEC SILICON |
发明人 |
FAURE, BRUCE;LETERTRE, FABRICE;GUENARD, PASCAL |
分类号 |
H01L21/20;C30B29/38;H01L21/762 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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