| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device having a fine contact hole with a good shape. <P>SOLUTION: A method of manufacturing a semiconductor device includes the following steps of: forming a photoresist film 42 on an insulating film 36; forming an opening 44 to the photoresist film 42; and etching the insulating film 36 using the photoresist film 42 to which the opening 44 is formed as a mask to form a contact hole 48. The step of forming a contact hole 48 includes: a first step of performing plasma etching of the insulating film 36 while depositing a protection film 46 on the photoresist film 42 to which the opening 44 is formed; a second step of removing the protection film 46 deposited on the photoresist film 42 once; and a third step of further performing plasma etching of the insulating film 36 while newly depositing another protection film on the photoresist film 42 from which the protection film 46 is removed once. <P>COPYRIGHT: (C)2012,JPO&INPIT |
