发明名称 |
Fitting methodology of etching times determination for a mask to provide critical dimension and phase control |
摘要 |
The present disclosure provides a mask and a method of determining etching times for etching the mask. In one embodiment, values for a main etching time and an over-etching time are determined simultaneously based on a desired critical dimension (CD) parameter and a desired phase parameter for the mask. |
申请公布号 |
US8158015(B2) |
申请公布日期 |
2012.04.17 |
申请号 |
US20070686773 |
申请日期 |
2007.03.15 |
申请人 |
LIN CHENG-MING;HUANG JOY;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LIN CHENG-MING;HUANG JOY |
分类号 |
G01L21/30 |
主分类号 |
G01L21/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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