| 摘要 |
<p>Disclosed is a method of manufacturing a high purity copper (Cu) powder material useable in fabricating a sputtering target material for electronic industrial applications, a penetrator liner, or the like. The foregoing method has a configuration of using an apparatus composed of a raw material feeder, a plasma torch and a reactor to prepare a metal powder, and includes passing a Cu powder having an average particle diameter of 30 to 450 µ m through the thermal plasma torch at an introduction rate of 2 to 30 kg/hr, to thereby fabricate a Cu powder having an average particle diameter of 5 to 300 µ m.</p> |
