| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a piezoelectric device capable of making thickness of an etched layer required for maintaining a practical etching speed thinner than that of a conventional one. <P>SOLUTION: First, ions are implanted into an ion implantation surface of a piezoelectric substrate, to form an ion implantation portion inside the piezoelectric substrate. Then, a temporary laminate with a constitution such that a temporary substrate is laminated at least via an etched layer is formed on the ion implantation surface. Then, the temporary laminate is heated, and a piezoelectric thin film is separated from the piezoelectric substrate with the ion implantation portion as a separation surface. Then, a laminate with a constitution such that at least a supporting substrate is laminated is formed on the separation surface. And the etched layer is etched to remove the etched layer and the temporary substrate under a stress applying condition that a stress for enlarging an interval between the temporary substrate and the supporting substrate is applied to the temporary substrate or the supporting substrate. <P>COPYRIGHT: (C)2012,JPO&INPIT |
