| 摘要 |
<p>PURPOSE: Silicon-containing photoresist material is provided to restrain the deterioration of contrast and deformation of resist profile, and to obtain resist patterns of high aspect ratio and high resolution. CONSTITUTION: A silicon-containing polymer comprises an amine group, a hydroxyl group, or a thiol group, and is in chemical formula 1. In chemical formula 1, R1 is C1-20 hydrocarbon, Z is an amine group, a hydroxyl group, or thiol group, and x and y is an integer. A photo resist composition comprises a first polymer containing a first polymer containing diazoketo group, and a silicone-containing second polymer comprising an amine group, a hydroxyl group, or thiol group as a functional group. The first polymer contains the diazoketo group in a side chain.</p> |
