发明名称 |
ION DOPING APPARATUS AND ION DOPING METHOD |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide an ion doping apparatus for doping with only hydrogen ions with the same mass with a simple apparatus structure having no mass separation function, and provide an ion doping method thereof. <P>SOLUTION: When hydrogen is introduced to a plasma chamber including a dielectric plate as a part of an outer wall and a surface wave is generated at the dielectric plate by microwaves, a region is formed where negative ions of hydrogen are easily generated. Since all the generated negative ions have a molecular mass of 1, only the ions with the same mass can be added to a target by applying an electric field without mass separation. <P>COPYRIGHT: (C)2012,JPO&INPIT |
申请公布号 |
JP2012074368(A) |
申请公布日期 |
2012.04.12 |
申请号 |
JP20110188565 |
申请日期 |
2011.08.31 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
KIKUCHI ERM;SEKINE WATARU |
分类号 |
H01J27/16;H01J37/08;H01J37/317;H01L21/265 |
主分类号 |
H01J27/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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