发明名称 ION DOPING APPARATUS AND ION DOPING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide an ion doping apparatus for doping with only hydrogen ions with the same mass with a simple apparatus structure having no mass separation function, and provide an ion doping method thereof. <P>SOLUTION: When hydrogen is introduced to a plasma chamber including a dielectric plate as a part of an outer wall and a surface wave is generated at the dielectric plate by microwaves, a region is formed where negative ions of hydrogen are easily generated. Since all the generated negative ions have a molecular mass of 1, only the ions with the same mass can be added to a target by applying an electric field without mass separation. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012074368(A) 申请公布日期 2012.04.12
申请号 JP20110188565 申请日期 2011.08.31
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 KIKUCHI ERM;SEKINE WATARU
分类号 H01J27/16;H01J37/08;H01J37/317;H01L21/265 主分类号 H01J27/16
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