| 摘要 |
<p>A pixel structure for an image sensor includes a semiconductor material portion (30) having a coplanar and contiguous semiconductor surface and including four photodiodes (30A, 30B, 30C, 30D), four channel regions (31A, 31B, 31C, 31D), and a common floating diffusion region (32). Each of the four channel regions is directly adjoined to one of the four photodiodes and the common floating diffusion region. The four photodiodes are located within four different quadrants (1Q_O1, 2Q-01, 3Q_01, 4Q_01) as defined employing a vertical line passing through a point (01) within the common floating diffusion region as a center axis. The common floating diffusion region, a reset gate transistor (RG), a source follower transistor (SF), and a row select transistor (RS) are located within four different quadrants (1Q_O2, 2Q_02, 3Q_02, 4Q_02) as defined employing a vertical line passing through a point (02) within one of the photodiodes (30A) as an axis.</p> |
