| 摘要 |
PURPOSE: An internal voltage generating circuit of a semiconductor memory device is provided to stably supply an internal voltage by including an enable unit which activates or inactivates an amplification unit. CONSTITUTION: A pulse generating unit(210) generates a pulse signal for activating a pulse at a section with a drop of an internal voltage level. A differential amplification unit is activated by corresponding to the pulse signal from the pulse generating unit and outputs an output voltage by comparing a divided voltage from an output node with a reference voltage. A driving unit outputs an internal voltage by corresponding to the output of the differential amplification unit. A compensating unit(250) outputs an output voltage by corresponding to the pulse signal from the pulse generating unit. |
