MANUFACTURING APPARATUS FOR RESISTANCE MEMORY DEVICE

摘要

PURPOSE: A resistive memory device manufacturing apparatus is provided to manufacture oxide layers in different chambers with respect to the composition of each oxide layer, thereby preventing contamination generated by manufacturing the oxide layers in a single chamber. CONSTITUTION: A load-lock chamber(210) receives a substrate from the outside. A movable module chamber(220) comprises a robot arm which transfers the substrate from the load-lock chamber. A first oxide deposition chamber(240) is used for depositing a first buffer layer and a second buffer layer. A second oxide deposition chamber(250) is used for depositing a resistive change layer. A metal electrode deposition chamber(230) is used for depositing a first electrode and a second electrode.