| 摘要 |
<P>PROBLEM TO BE SOLVED: To achieve high integration and high yield of a nonvolatile semiconductor memory device. <P>SOLUTION: A nonvolatile semiconductor memory device comprises: a first to fourth fin-type stacked structures 9-1, 9-2, 9-3, and 9-4 having a plurality of memory strings; a first portion P1 connecting first ends in a second direction of the first and second fin-type stacked structures 9-1 and 9-2 to each other; a second portion P2 connecting first ends in the second direction of the third and fourth fin-type stacked structures 9-3 and 9-4 to each other; a third portion P3 connecting second ends in the second direction of the first and third fin-type stacked structures 9-1 and 9-3 to each other; and a fourth portion P4 connecting second ends in the second direction of the second and fourth fin-type stacked structures 9-2 and 9-4 to each other. The first and second portions P1 and P2 are source regions and the third and fourth portions P3 and P4 are drain regions. <P>COPYRIGHT: (C)2012,JPO&INPIT |
