| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve a performance of a semiconductor device having a nonvolatile memory. <P>SOLUTION: Insulator films 5 are formed between a memory gate electrode MG of a split gate type nonvolatile memory and a p-type well PW1, and between a control gate electrode CG and the memory gate electrode MG. Among the insulator films 5, a portion between a lower face of the memory gate electrode MG and an upper face of a semiconductor substrate 1 has silicon oxide films 9a, 9b and a silicon nitride film 10a sandwiched between the silicon oxide films 9a, 9b. Among the insulator films 5, a portion between a side face of the control gate electrode CG and a side face of the memory gate electrode MG comprises a silicon oxide film 6a, and does not have the silicon nitride film 10a. <P>COPYRIGHT: (C)2012,JPO&INPIT |
