发明名称 |
Method and apparatus for wafer bonding with enhanced wafer mating |
摘要 |
An improved wafer-to-wafer bonding method includes aligning an upper and a lower wafer and initiating a bond at a single point by applying pressure to a single point of the upper wafer via the flow of pressurized gas through a port terminating at the single point. The bond-front propagates radially across the aligned oppositely oriented wafer surfaces at a set radial velocity rate bringing the two wafer surfaces into full atomic contact by controlling the gas pressure and/or controlling the velocity of the motion of the lower wafer up toward the upper wafer. |
申请公布号 |
US8147630(B2) |
申请公布日期 |
2012.04.03 |
申请号 |
US20090618846 |
申请日期 |
2009.11.16 |
申请人 |
GEORGE GREGORY;SUSS MICROTEC LITHOGRAPHY, GMBH |
发明人 |
GEORGE GREGORY |
分类号 |
B32B41/00 |
主分类号 |
B32B41/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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