| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of efficiently determining a position of an auxiliary pattern so that lithography tolerance becomes large, a manufacturing method of a photomask, and a manufacturing method of a semiconductor device. <P>SOLUTION: The position determination method of an auxiliary pattern includes: a step S1 of generating first sets respectively for three or more imaging positions of an exposure optical system by extracting a part which can be handled linearly from a mutual transmission coefficient as to the three or more imaging positions; a step S2 of generating second sets respectively for the three or more imaging positions by performing inverse Fourier transformation on the first sets; a step S3 of calculating two-time differential values of indexes indicative of amplitude of light belonging to the second sets with respect to the imaging positions; and a step S4 of extracting positions where the two-time differential values are extreme on an imaging plane of the exposure optical system. At least a part of a position of the photomask which corresponds to the position of the extreme value on the imaging plane is determined as a formation position of the auxiliary pattern. <P>COPYRIGHT: (C)2012,JPO&INPIT |
